Semiconductor device, manufacturing method thereof, and electronic apparatus

ABSTRACT

A semiconductor device includes a wiring layer that includes at least one low-dielectric rate interlayer insulating film layer; a guard ring that is formed by placing in series a wire and a via so as to be in contact with a through electrode, in a portion in which the through electrode passing through the wiring layer is formed; and the through electrode that is formed by being buried inside the guard ring.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/505,006, filed Oct. 2, 2014, which claims the benefit of JapanesePriority Patent Application JP 2013-211642, filed Oct. 9, 2013, theentire contents of which are incorporated herein by reference.

BACKGROUND

The present technology relates to a semiconductor device, amanufacturing method thereof, and an electronic apparatus, andparticularly to a semiconductor device which can reduce a failure ratewhen a through electrode of a low-dielectric rate insulating film isformed, a manufacturing method thereof, and an electronic apparatus.

According to higher integration caused by miniaturization of an LSImanufacturing process, an electronic apparatus including a computer hasachieved high performance such as miniaturization, multi-function, andhigh speed so far. However, by realization of further miniaturization, atechnology reaches a limit, and as one of the technologies that overcomethe limit of miniaturization in a plane, a three-dimensional packagingtechnology development has been activated.

An Si through electrode (through-silicon via: TSV) is an electrode whichvertically passes through the inside of a silicon semiconductor chip,and is one of the most important technologies in the three-dimensionalpackaging technology development. In order to accommodate a plurality ofchips in a single package by stacking the chips, connection of upper andlower chips heretofore performed by wire bonding is performed by theTSV.

As a method for bonding two or more wafers and for forming the TSV ofthrough wires between the plurality of wafers and wires, as disclosedin, for example, Japanese Unexamined Patent Application Publication No.2010-219526, there has been proposed a method for forming the TSV in aprocess before and after a FEOL process of a general LSI manufacturingprocess, forming the TSV after a so-called via-first process, the BEOLprocess of the LSI manufacturing process, or a thin film process of awafer, and combining the TSV in a so-called via-last process.

Furthermore, as a method for reducing the number of processes ordecreasing an area occupied by the TSV section, as disclosed in U.S.Pat. No. 7,714,446, there has been considered a method for bonding twochips using one through electrode, so-called forming a shared contactthrough electrode.

SUMMARY

However, if the above-described shared contact through electrode uses alow-dielectric rate insulating film (hereinafter, referred to as Low-kinsulating film) which is used for a semiconductor element of astate-of-the-art LSI, as an interlayer insulating film, in a structurein which chip wiring is bonded in a single layer with respect to thethrough electrode, the Low-k insulating film retreats at the time ofplasma etching or cleaning, and abnormality of a processed shape occurs.

Such abnormality of the processed shape produces a plane in which it isdifficult to form a film with eaves when barrier metal is formed at thetime of filling the through electrode with metal which is apost-process, causes a void to be produced at the time of plating metal,and causes wiring reliability of a semiconductor element to be degraded.

In addition to the abnormality of the processed shape, the Low-kmaterials are changed by damage at the time of plasma etching, or byabsorbing moisture at the time of cleaning or while in the atmosphere,and causes an element characteristic to be degraded.

It is desirable to reduce a failure rate when a through electrode of alow-dielectric rate insulating film is formed.

According to an embodiment of the present technology, there is provideda semiconductor device including: a wiring layer that includes at leastone low-dielectric rate interlayer insulating film layer; a guard ringthat is formed by placing in series a wire and a via so as to be incontact with a through electrode, in a portion in which the throughelectrode passing through the wiring layer is formed; and the throughelectrode that is formed by being buried inside the guard ring.

In the embodiment, the guard ring may be electrically connected.

In the embodiment, a plurality of semiconductor substrates may bestacked, and the semiconductor substrate including the wiring layer maybe electrically connected to another semiconductor substrate through thethrough electrode.

In the embodiment, the semiconductor substrate including a contact imagesensor (CIS) may be stacked on the semiconductor substrate including thewiring layer.

In the embodiment, the semiconductor substrate including the wiringlayer may be configured to include a signal processing circuit.

In the embodiment, the semiconductor substrate including the wiringlayer may be configured to include a contact image sensor (CIS).

In the embodiment, another semiconductor substrate may be configured toinclude a signal processing circuit.

In the embodiment, another semiconductor substrate may be configured toinclude a storage medium circuit.

According to another embodiment of the present technology, there isprovided a manufacturing method of a semiconductor device, including:forming a guard ring by placing in series a wire and a via so as to bein contact with a through electrode, in a portion in which the throughelectrode passing through a wiring layer is formed, in the wiring layerthat includes at least one low-dielectric rate interlayer insulatingfilm layer, using a manufacturing device; and forming the throughelectrode inside the formed guard ring, using the manufacturing device.

According to still another embodiment of the present technology, thereis provided an electronic apparatus including: a semiconductor device,in which the semiconductor device includes a wiring layer which includesat least one low-dielectric rate interlayer insulating film layer; aguard ring that is formed by placing in series a wire and a via so as tobe in contact with a through electrode, in a portion in which thethrough electrode passing through the wiring layer is formed; and thethrough electrode that is formed by being buried inside the guard ring.

In the embodiment, the semiconductor device may be a solid-state imagingdevice, and the semiconductor device may further include a signalprocessing circuit that processes an output signal that is output fromthe solid-state imaging device and an optical system that makes incidentlight be incident on the solid-state imaging device.

According to still another embodiment of the present technology, a guardring is formed by placing in series a wire and a via so as to be incontact with a through electrode, in a portion in which the throughelectrode passing through a wiring layer is formed, in the wiring layerthat includes at least one low-dielectric rate interlayer insulatingfilm layer; and the through electrode is formed inside the formed guardring.

According to the present technology, it is possible to form a throughelectrode in a low-dielectric rate insulating film. In addition,according to the present technology, it is possible to decrease afailure rate when the through electrode of the low-dielectric rateinsulating film is formed.

In addition, the effects described in the present specification are onlyexemplification, the effects of the present technology are not limitedto the effects described in the present specification, and there may beadditional effects.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a schematic configuration exampleof a solid-state imaging device to which the present technology isapplied;

FIGS. 2A to 2C illustrate basic schematic configurations of asolid-state imaging device according to an embodiment of the presenttechnology;

FIGS. 3A and 3B illustrate basic schematic configurations of thesolid-state imaging device according to another embodiment of thepresent technology;

FIGS. 4A to 4C are views illustrating configuration examples of asemiconductor chip stacked on a solid-state imaging device according toa first embodiment of the present technology;

FIG. 5 is a flow chart for explaining manufacturing processing of asolid-state imaging device;

FIG. 6 is a flow chart for explaining forming processing of a throughelectrode;

FIGS. 7A to 7C are views illustrating a manufacturing process of asolid-state imaging device;

FIGS. 8A and 8B are views illustrating a manufacturing process of asolid-state imaging device;

FIGS. 9A and 9B are views illustrating a manufacturing process of asolid-state imaging device;

FIG. 10 is a flow chart for explaining manufacturing processing of asolid-state imaging device according to a second embodiment of thepresent technology;

FIG. 11 is a flow chart for explaining forming processing of a lightconcentration structure;

FIGS. 12A and 12B are views illustrating a manufacturing process of asolid-state imaging device;

FIGS. 13A and 13B are views illustrating a manufacturing process of asolid-state imaging device;

FIG. 14 is a flow chart for explaining manufacturing processing of asolid-state imaging device according to a third embodiment of thepresent technology;

FIGS. 15A and 15B are views illustrating a manufacturing process of asolid-state imaging device;

FIGS. 16A and 16B are views illustrating a manufacturing process of asolid-state imaging device;

FIG. 17 is a flow chart for explaining manufacturing processing of asolid-state imaging device according to a fourth embodiment of thepresent technology;

FIGS. 18A to 18C are views illustrating a manufacturing process of asolid-state imaging device;

FIGS. 19A and 19B are views illustrating a manufacturing process of asolid-state imaging device;

FIGS. 20A and 20B are views illustrating a modification example of awire connection of a guard ring and an element;

FIGS. 21A and 21B are views illustrating a modification example offorming a through hole;

FIGS. 22A and 22B are views illustrating a modification example offorming a through hole;

FIGS. 23A and 23B are views illustrating a modification example ofacquiring insulating properties of an Si substrate unit and a throughelectrode;

FIGS. 24A and 24B are views illustrating a modification example of abonding method of a through electrode and a guard ring;

FIGS. 25A to 25C are views illustrating a modification example of awidth of a guard ring; and

FIG. 26 is a block diagram illustrating a configuration example of anelectronic apparatus according to a sixth embodiment of the presenttechnology.

DETAILED DESCRIPTION OF EMBODIMENTS

Hereinafter, forms (hereinafter, referred to as embodiments) forexecuting the present technology will be described. In addition, thedescription will be made in the following sequence.

0. Schematic Configuration Example of Solid-State Imaging Device

1. First Embodiment (Example of Semiconductor Device of Two Layers)

2. Second Embodiment (Example of Semiconductor Device of Two Layers)

3. Third Embodiment (Example of Semiconductor Device of Three Layers)

4. Fourth Embodiment (Example of Semiconductor Device of Three Layers)

5. Fifth Embodiment (Modification Example)

6. Sixth Embodiment (Example of Electronic Apparatus)

0. Schematic Configuration Example of Solid-State Imaging DeviceSchematic Configuration Example of Solid-State Imaging Device

FIG. 1 illustrates a schematic configuration example of an example of aComplementary Metal Oxide Semiconductor (CMOS) solid-state imagingdevice which is applied to each embodiment of the present technology.

As illustrated in FIG. 1, a solid-state imaging device (element chip) 1includes a pixel area (a so-called imaging area) 3 in which pixels 2including a plurality of photoelectric conversion elements are regularlyand two-dimensionally arranged in a semiconductor substrate 11 (forexample, silicon substrate), and a peripheral circuit unit.

The pixel 2 includes a photoelectric conversion element (for example, aphoto diode) and a plurality of pixel transistors (so-called MOStransistors). The plurality of pixel transistors can each be configuredwith three transistors such as a transfer transistor, a resettransistor, and an amplification transistor, and furthermore, can beconfigured with four transistors with a selection transistor in additionto the three transistors. An equivalent circuit of each pixel 2 (unitpixel) is the same as that of a general pixel, and thus, hereinafter,detailed description thereof will not be repeated.

In addition, the pixel 2 can also be configured by a pixel sharingstructure. The pixel sharing structure is configured with a plurality ofphoto diodes, a plurality of transfer transistors, one shared floatingdiffusion, and another shared pixel transistor.

The periphery circuit unit is configured with a vertical driving circuit4, a column signal processing circuit 5, a horizontal driving circuit 6,an output circuit 7, and a control circuit 8.

The control circuit 8 receives data instructing an input clock, anoperation mode, or the like, and in addition, outputs data of internalinformation or the like of the solid-state imaging device 1.Specifically, based on a vertical synchronization signal, a horizontalsynchronization signal, and a master clock, the control circuit 8generates a clock signal or a control signal which becomes a referenceof operations of the vertical driving circuit 4, the column signalprocessing circuits 5, and the horizontal driving circuit 6. Then, thecontrol circuit 8 inputs such signals to the vertical driving circuit 4,the column signal processing circuits 5, and the horizontal drivingcircuit 6.

The vertical driving circuit 4 is configured by, for example, a shiftregister, selects a pixel driving wire, supplies a pulse for driving thepixel 2 to the selected pixel driving wire, and drives the pixels 2 by arow. Specifically, the vertical driving circuit 4 selectively scans eachpixel 2 in the pixel area 3 by a row sequentially in a verticaldirection, and supplies the column signal processing circuit 5 with apixel signal based on signal charges generated according to the receivedamount of light in the photoelectric conversion element of each pixel 2through a vertical signal line 9.

For example, the column signal processing circuit 5 is arranged in eachcolumn of the pixel, and performs signal processing, such as noiseremoval or the like for each pixel column with respect to a signaloutput from the pixels 2 of one column. Specifically, the column signalprocessing circuit 5 performs signal processing, such as correlateddouble sampling (CDS) for removing inherent fixed pattern noise of thepixel 2, signal amplification, or analog/digital (A/D) conversion.Horizontal selection switches (not illustrated) are connected betweenoutput stages of the column signal processing circuits 5 and ahorizontal signal line 10.

The horizontal driving circuit 6 is configured by, for example, a shiftregister, sequentially selects each column signal processing circuit 5by sequentially outputting the horizontal scanning pulses, and outputsthe pixel signal from each column signal processing circuit 5 to thehorizontal signal line 10.

The output circuit 7 performs signal processing with respect to thesignal sequentially supplied through the horizontal signal line 10 fromeach column signal processing circuit 5 and outputs the signal-processedsignal. For example, the output circuit 7 performs only buffering, orperforms black level adjustment, column variation correction, variousdigital signal processing, or the like.

Input and output terminals 12 are provided to exchange a signal with anexternal device.

FIGS. 2A to 2C illustrate basic schematic configurations of asolid-state imaging device according to an embodiment of the presenttechnology.

As illustrated in FIG. 2A, a solid-state imaging device 15 is configuredto include a pixel area 17, a control circuit 18, and a logic circuit 19for signal processing which are included in one semiconductor chip 16.In general, an image sensor 20 is configured by the pixel area 17 andthe control circuit 18.

In contrast to this, as illustrated in FIG. 2B, the solid-state imagingdevice according to the embodiment of the present technology includesthe pixel area 23 and the control circuit 24 in a first semiconductorchip unit 22, and includes a logic circuit 25 which includes a signalprocessing circuit for signal processing in a second semiconductor chipunit 26. In addition, the control circuit 24 includes, for example, thevertical driving circuit 4, the horizontal driving circuit 6, thecontrol circuit 8, and the like which are illustrated in FIG. 1. Inaddition, the logic circuit 25 includes, for example, a signalprocessing circuit for performing correction, or the signal processingof gain or the like with respect to an output of the output circuit 7illustrated in FIG. 1.

Alternatively, in addition, as illustrated in FIG. 2C, the solid-stateimaging device according to the embodiment of the present technologyincludes the pixel area 23 in the first semiconductor chip unit 22, andincludes the control circuit 24 and the logic circuit 25 including thesignal processing circuit in the second semiconductor chip unit 26.

Then, by electrically connecting the first semiconductor chip unit 22 tothe second semiconductor chip unit 26, the solid-state imaging device isconfigured as one semiconductor chip.

In addition, the configuration of the solid-state imaging device is notlimited to FIGS. 3B and 3C, and for example, a portion of the controlcircuit 24 (for example, the vertical driving circuit 4, the horizontaldriving circuit 6, and the control circuit 8) can be included in thefirst semiconductor chip unit 22, and the other portion of the controlcircuit 24 can be included in the second semiconductor chip unit 26. Forexample, the vertical driving circuit 4 and the horizontal drivingcircuit 6 may be included in the first semiconductor chip unit 22 as aportion, and the other portion may be included in the secondsemiconductor chip unit 26. Alternatively, only the vertical drivingcircuit 4 (or the horizontal driving circuit 6) may be included in thefirst semiconductor chip unit 22, and the others may be included in thesecond semiconductor chip unit 26. In addition, the second semiconductorchip unit 26 may include a memory circuit which stores a signal input tothe pixel area, data resulting from the signal processing, or the like.For example, the second semiconductor chip unit 26 may include both thelogic circuit 25 and the memory circuit.

In addition, as illustrated in FIGS. 3A and 3B, the solid-state imagingdevice according to the embodiment of the present technology can beconfigured as one semiconductor chip by electrically connecting thesemiconductor chip units of three layers.

That is, as illustrated in FIG. 3A, the solid-state imaging deviceaccording to the embodiment of the present technology includes the pixelarea 23 and the control circuit 24 in the first semiconductor chip unit22, and includes the logic circuit 25 including the signal processingcircuit for signal processing in the second semiconductor chip unit 26.Furthermore, as illustrated in FIG. 3A, the solid-state imaging deviceincludes the memory circuit 28 which stores the signal input to thepixel area, the data resulting from the signal processing, or the likein a third semiconductor chip unit 27.

Alternatively, in addition, as illustrated in FIG. 3B, the solid-stateimaging device according to the embodiment of the present technologyincludes the pixel area 23 in the first semiconductor chip unit 22, andincludes the control circuit 24 and the logic circuit 25 including thesignal processing circuit in the second semiconductor chip unit 26.Furthermore, as illustrated in FIG. 3B, the solid-state imaging deviceincludes a memory circuit 28 in the third semiconductor chip unit 27.

Then, by electrically connecting the first semiconductor chip unit 22,the second semiconductor chip unit 26, and the third semiconductor chipunit 27, the solid-state imaging device is configured as onesemiconductor chip.

In addition, the configuration of each unit included in the control areaillustrated in FIGS. 3A and 3B, in the same manner as the configurationof the control area described above with reference to FIGS. 2A to 2C,can be made to include a portion of the control circuit 24 in the firstsemiconductor chip unit 22, and to include the other portion of thecontrol circuit 24 in the second semiconductor chip unit 26. Inaddition, in the example of FIGS. 3A and 3B, the memory circuit may beincluded in the second semiconductor chip unit 26. In addition, thelogic circuit may be included in the third semiconductor chip unit 27.For example, the second semiconductor chip unit 26 or the thirdsemiconductor chip unit 27 may include both the logic circuit 25 and thememory circuit.

As described above, the solid-state imaging device according to theembodiment of the present technology is configured by stacking thesemiconductor chips (semiconductor substrates). In addition,hereinafter, the examples in which the semiconductor chips are stackedwith two layers and the semiconductor chips are stacked with threelayers are described, but are not limited to the two layers or threelayers, and may be stacked with four layers, five layers, or more.

Next, a manufacturing method of the solid-state imaging device which isconfigured by stacking the semiconductor substrates will be described.

1. First Embodiment Configuration Example of Semiconductor Chip

FIGS. 4A to 4C are views illustrating configuration examples of asemiconductor chip (semiconductor substrate) stacked on a solid-stateimaging device according to a first embodiment of the presenttechnology. FIG. 4A is a top view in which an upper semiconductor chip(hereinafter, referred to as a chip) 51 is viewed from top, FIG. 4B is aside view of the upper chip 51, and FIG. 4C is a side view of a lowerchip 52. In addition, in the examples of FIGS. 4A to 4C, not all theunits have symbols or reference numerals, but the portions having thesame hatching are represented by the same symbols or reference numerals,and this is applied to the following description in the same manner asabove.

As a first embodiment, the upper chip 51 and the lower chip 52 which arechips including logic circuits having signal processing circuits will befirst described.

As illustrated in FIG. 4B, the upper chip 51 includes an elementseparation member 62, a gate 63, and a contact member 64 which areformed in an Si substrate unit 61, and after the upper chip 51 isplanarized, four wiring layers are formed thereon. The four wiringlayers are interlayer insulating films, use low-dielectric rateinsulating films (hereinafter, referred to as Low-k insulating films)65, use wiring metal (for example, Cu) 66 as a wire and a via, andfurther use barrier metal (for example, Ta or TaN) 67 for the wiringmetal 66. A diffusion barrier film (for example, SiCN) 68 is usedbetween the wiring layers, and an insulating film (for example, SiO2) 69is formed on the wiring layer.

For example, a porous SiOC film, a porous Hydrogen Silsesquioxane (HSQ)film, and a porous Methyl Silsesquioxane (MSQ) film are representativelyused as Low-k materials. In such Low-k materials, film componentsincluding porogen are first deposited by a CVD method or a coatingmethod, and thereafter, the porogen is formed by being separated fromthe film components by UV curing, plasma curing, thermal processing, andcuring performed by an electron beam. Thus, not only a plurality ofholes which are originally provided in each film and have small averagediameter, but also a plurality of holes which are formed by theseparated porogen and have large average diameter, are included in sucha porous SiOC film, a porous HSQ film, and a porous MSQ film.

As a result, the Low-k insulating film is weaker than SiO2 or the like,and if the Low-k insulating film is used as an interlayer insulatingfilm, the Low-k insulating film retreats at the time of plasma etchingor cleaning, and abnormality of a processed shape occurs.

Therefore, when the upper chip 51 including a wiring layer having atleast one Low-k interlayer insulating film 65 is formed, the guard ring71 is formed by placing the wires of each wiring layer and the vias in avertical structure (in series) so as to be in contact with the throughelectrode, in the portion in which the through electrode forelectrically and mutually connecting to the lower chip 52 is formed. Asillustrated in FIG. 4A, the guard ring 71 is formed in a circle whenviewed from the top. In addition, hereinafter, a portion in which thethrough electrode is formed is referred to as a through electrodeforming portion.

In FIG. 4B, the guard ring 71 is electrically connected to a wire on anelement side in a first layer when viewed from the bottom. It ispreferable that a diameter of the guard ring 71 be, for example, 1 um to5 um, and a wiring width be, for example, 50 nm to 500 nm. It ispreferable that, since the guard ring 71 is formed at the same time asthe wire, the material of the guard ring 71 be the same as a generalwiring material (for example, Cu or Al), or a barrier material (forexample, Ta, Ti, TiN, or TaN).

As illustrated in FIG. 4C, the lower chip 52 is different from the upperchip 51 in that the position, the number, and the like of the wire orthe element separation member 62, the gate 63, and the contact member 64are different, the guard ring 71 is not formed, and the pads 81 areformed. In contrast, the other basic configurations of the lower chip 52are the same as those of the upper chip 51 described above.

That is, in the lower chip 52, the element separation member 62, thegate 63, and the contact member 64 are formed in the Si substrate unit61, and after being planarized, four wiring layers are formed. The fourwiring layers use the Low-k insulating film 65 as an interlayerinsulating film, and use the wiring metal 66 as a wire and a via, andfurther use the barrier metal 67 for the wiring metal 66. A diffusionbarrier film is used for each wiring interlayer, and on the wiringlayer, pads are provided and the insulating film 69 is formed.

The reversed upper chip 51 is bonded on such a lower chip 52, and thethrough electrode is formed inside the guard ring 71 of the upper chip51, and thereby the solid-state imaging device is configured.

Manufacturing Processing of Solid-State Imaging Device

Next, with reference to the flow charts of FIGS. 5 and 6, and theprocess diagrams of FIGS. 7A to 9B, manufacturing processing of asolid-state imaging device in which the two semiconductor chipsillustrated in FIGS. 4A to 4C are stacked will be described. Inaddition, such processing is performed by a manufacturing device whichmanufactures the solid-state imaging device.

First, in step S51 of FIG. 5, as illustrated in FIG. 4B described above,the manufacturing device forms the guard ring 71 in a portion in whichthe through electrode of the upper chip 51 including the Low-kinterlayer insulating film 65 is formed.

In step S52, the manufacturing device forms another chip (the lower chip52 illustrated in FIG. 4C described above) which is bonded to the upperchip 51 by the through electrode. In addition, a forming method of thelower chip 52 is the same as the forming method of the semiconductorchip of the related art.

In step S53, the manufacturing device performs forming processing of thethrough electrode. Such forming processing of the through electrode willbe described with reference to the flow chart of FIG. 6.

In step S71, the manufacturing device bonds the reversed upper chip 51to the lower chip 52 and performs lithography in the portion in whichthe through electrode is formed in the upper chip 51.

That is, as illustrated in FIG. 7A, an insulating film (for example,SiO2) 91 is formed on the substrate of the reversed upper chip 51, andthereon, a resist 92 is formed in a portion other than the portion inwhich the through electrode is formed, and lithography is performed. Inaddition, as illustrated in FIG. 7A, the resist 92 is hung over theguard ring 71 so as to be able to be in contact with the guard ring 71from the rear.

In step S72, as illustrated in FIG. 7B, the manufacturing deviceperforms plasma etching until right before the wiring metal is exposed,and thereafter, removes the resist 92.

In step S73, as illustrated in FIG. 7C, the manufacturing device formsan insulating film 93 which insulates the Si substrate unit 61 and thethrough electrode. For example, the insulating film 93 with SiO2 of 100nm to 400 nm is formed.

In step S74, as illustrated in FIG. 8A, the manufacturing device forms aresist 94 in such a manner that a through hole 95 (FIG. 8B) can beformed up to a pad 81 of the lower chip 52, without exposing the wiringmetal, and performs lithography.

In step S75, as illustrated in FIG. 8B, the manufacturing device formsthe through hole 95 up to the pad 81 of the lower chip 52 using theplasma etching, and thereafter, removes the resist 94. At this time, theLow-k insulating film 65 in the guard ring 71 retreats or disappears.

In step S76, as illustrated in FIG. 9A, the manufacturing device exposesa wiring layer of the upper chip 51 in the guard ring 71 using theplasma etching. In addition, as illustrated in FIG. 8B, after the Low-kinsulating film 65 retreats in step S75, the diffusion barrier filmremains on a side of the through hole 95, thereby becoming uneven. Thus,by the plasma etching in step S76, the wiring layer of the upper chip 51is exposed, the diffusion barrier film remaining on the side of thethrough hole in step S75 is removed, and thereby the side is planarized,as illustrated in FIG. 9A.

In step S77, as illustrated in FIG. 9B, the manufacturing device forms afilm in the through hole 95 using a barrier metal 96, buries metal, andthen forms the through electrode 97 inside the guard ring 71. Asdescribed above, the reversed upper chip 51 is bonded on the lower chip52, the through electrode is formed inside the guard ring 71 formed inthe wiring layer including the Low-k interlayer insulating film of theupper chip 51, and the semiconductor device in which two semiconductorchips are stacked is manufactured.

As described above, when the through electrode is formed using the guardring, the Low-k interlayer insulating film is shielded almost completelyfrom plasma, cleaning chemical liquid, and the atmosphere. As a result,even if the through electrode passes through the Low-k interlayerinsulating film, abnormality of the processed shape caused by retreat ofthe Low-k insulating film almost disappears. Thus, it is possible todecrease film failure occurring when the film of the barrier metal isformed, or a void occurring when the wire is buried, or the like, and toimprove decrease of a failure rate or reliability.

In addition, when the through hole is formed, it is possible to preventthe Low-k interlayer insulating film from absorbing moisture while inthe atmosphere or at the time of cleaning. As a result, it is possibleto decrease characteristic degradation and failure of the semiconductorelements caused by Low-k alteration.

2. Second Embodiment

Manufacturing Processing of Solid-State Imaging Device

Next, with reference to the flow charts of FIGS. 10 and 11, and theprocess diagrams of FIGS. 12A to 13B, manufacturing processing of asolid-state imaging device in which both a semiconductor chip having animaging element (that is, CIS: Contact Image Sensor) and a semiconductorchip having the logic circuit are stacked will be described. Inaddition, in such an example, an example of back-illuminated typeimaging element is illustrated as an imaging element, for example.

In step S111 of FIG. 10, as illustrated in FIG. 12A, the manufacturingdevice forms the guard ring 71 in a portion in which a through electrodeof an upper chip 101 including the Low-k interlayer insulating film 65is formed.

In step S112, the manufacturing device forms another chip (the lowerchip 52 illustrated in FIG. 4C described above) which is bonded to theupper chip 101 by the through electrode.

In step S113, the manufacturing device performs forming processing ofthe through electrode. In addition, the upper chip 101 is simplydifferent from the upper chip 51 in that the gate 63 is replaced with atransfer gate 111, the element separation member 62 is replaced with afield diffusion member 112, and a photoelectric conversion unit 113 isadded.

That is, in the upper chip 101, the photoelectric conversion unit 113,the field diffusion member 112, the transfer gate 111, and the contactmember 64 are formed in the Si substrate unit 61, the upper chip 101 isplanarized, and thereafter, four wiring layers are formed. The fourwiring layers use the Low-k insulating film 65 as an interlayerinsulating film and use the wiring metal 66 as the wire and the via, andfurthermore, the barrier metal 67 is used for the wiring metal 66. Thediffusion barrier film is used between the wiring layers, and theinsulating film 69 is formed beneath the wiring layer.

Thus, since the forming processing of the through electrode of step S113is basically the same as the processing described above with referenceto FIG. 6, description thereof will not be repeated.

In step S113, the reversed upper chip 101 is bonded on the lower chip52, and the through electrode 97 is formed inside the guard ring 71 ofthe upper chip 101.

In step S114, the manufacturing device performs the forming processingof a light concentration structure. The forming processing of the lightconcentration structure will be described with reference to the flowchart of FIG. 11.

In step S131, as illustrated in FIG. 12B, the manufacturing device formsa diffusion barrier film 114 with respect to the through electrode 97,and an etching stop film 115.

In step S132, the manufacturing device performs patterning except on thethrough electrode 97.

In step S133, as illustrated in FIG. 13A, the manufacturing device formsa light-shielding film (material: Al or W) 116 in addition to thethrough electrode 97, forms an opening 118 in a receiving portion, andthereafter, forms a planarization film 117.

In step S134, as illustrated in FIG. 13B, the manufacturing device formsa color filter 119 and an on-chip lens 120.

As described above, the reversed upper chip 101 is bonded on the lowerchip 52, the through electrode is formed inside the guard ring 71 of theupper chip 101, and the solid-state imaging device in which asemiconductor chip including an imaging element and anothersemiconductor chip including a logic chip are stacked is manufactured.

In addition, in the above description, as an example in which twosemiconductor chips are stacked, examples are described in which asemiconductor device having stacked semiconductor chips including twologic circuits, and a semiconductor device having both a semiconductorchip including an imaging element and a semiconductor chip including alogic circuit are stacked. However, the configurations or the stacksequence of the semiconductor chips which are stacked in thesemiconductor device are not limited thereto. For example, the presenttechnology is applied to a semiconductor device in which a semiconductorchip including an imaging element and a semiconductor chip including amemory circuit are stacked, or to a semiconductor device in which both asemiconductor chip including a logic circuit and a semiconductor chipincluding a memory circuit are stacked.

3. Third Embodiment

Manufacturing Processing of Solid-State Imaging Device

Next, with reference to the flow chart of FIG. 14 and the processdiagrams of FIGS. 12A to 13B, manufacturing processing of a solid-stateimaging device in which a semiconductor chip having an imaging elementand two semiconductor chips having a logic circuit are stacked will bedescribed.

In step S151 of FIG. 14, as illustrated in FIG. 4B described above, themanufacturing device forms the guard ring 71 in a portion in which thethrough electrode of the upper chip 101 including the Low-k interlayerinsulating film 65 is formed.

In step S152, the manufacturing device forms another chip (the lowerchip 52 illustrated in FIG. 4C described above) which is bonded to theupper chip 101 by the through electrode.

In step S153, the manufacturing device performs the forming processingof the through electrode described above with reference to FIG. 6. Instep S153, as illustrated in FIG. 15A, the reversed upper chip 51 isbonded on the lower chip 52, and the through electrode 97 is formedinside the guard ring 71 of the upper chip 51.

In step S154, the manufacturing device forms a top chip 151 up to thewire. The top chip 151 is a chip which includes, for example, aback-illuminated type imaging element.

As illustrated in FIG. 15B, the top chip 151 is different from the upperchip 101 in that wiring layers have three layers, not four layers, andin addition, an Si oxide film 152 is used for the wiring layers insteadof the Low-k insulating film 65 as an interlayer insulating film. Thatis, the Low-k insulating film is not used for the top chip 151.

Thus, in the top chip 151, the photoelectric conversion unit 113, thefield diffusion member 112, the transfer gate 111, and the contactmember 64 are formed in the Si substrate unit 61, the top chip 151 isplanarized, and thereafter, three wiring layers are formed. The threewiring layers use the Si oxide film 152 as the interlayer insulatingfilm and use the wiring metal 66 as the wire and the via, andfurthermore, the barrier metal 67 is used for the wiring metal 66. Inaddition, there are wires in a position which is in contact with thethrough electrode 97 on a layer of a bonding side of the top chip 151.The diffusion barrier film is used between the wiring layers.

In step S155, the manufacturing device bonds the reversed top chip 151to a chip in which the upper chip 51 and the lower chip 52 are stacked.

In addition, such bonding is done by bonding wafers which are in stateswhere, for example, the existing Cu wire and SiO2 film are mixed.

In step S156, as illustrated in FIG. 16B, the manufacturing device formsthe insulating film (for example, SiO2) 91, forms the light-shieldingfilm (material: Al or W) 116, forms the opening 118 of thelight-receiving unit, and then forms the planarization film 117, on theSi substrate unit 61.

In step S157, the manufacturing device forms the color filter 119 andthe on-chip lens 120 on the planarization film 117.

As described above, the reversed upper chip 51 is bonded on the lowerchip 52, and the through electrode 97 is formed inside the guard ring 71of the upper chip 51. As a result, a semiconductor chip including animaging element and a semiconductor chip including a logic chip arestacked. Then, the semiconductor chip (the top chip 151) including theimaging element is further stacked on the stacked semiconductor chip,and thereby a solid-state imaging device is manufactured.

4. Fourth Embodiment

Manufacturing Processing of Solid-State Imaging Device

Next, with reference to the flow chart of FIG. 17, and the processdiagrams of FIGS. 18A to 19B, another example of manufacturingprocessing of a solid-state imaging device in which a semiconductor chiphaving an imaging element two semiconductor chips having a logic circuitare stacked will be described.

In step S211 of FIG. 17, as illustrated in FIG. 4B described above, themanufacturing device forms the guard ring 71 in a portion in which thethrough electrode of the upper chip 51 including the Low-k interlayerinsulating film 65 is formed.

In step S212, the manufacturing device forms another chip (the lowerchip 52 illustrated in FIG. 4C described above) which is bonded to theupper chip 51 by the through electrode.

In step S213, the manufacturing device performs the forming processingof the through electrode described above with reference to FIG. 6. Instep S213, as illustrated in FIG. 18A, the reversed upper chip 51 isbonded on the lower chip 52, and the through electrode 97 is formedinside the guard ring 71 of the upper chip 51.

In step S214, the manufacturing device bonds a reversed top chip 201which is formed by the existing method to a chip in which the upper chip51 and the lower chip 52 are stacked. The top chip 201 is a chip whichincludes, for example, a back-illuminated type imaging element.

As illustrated in FIG. 18B, the top chip 201 is different from the topchip 151 of FIG. 15B only in that there is no wire, while there is thewire in the position in which the top chip 151 is in contact with thethrough electrode 97. That is, in the top chip 201, the photoelectricconversion unit 113, the field diffusion member 112, the transfer gate111, and the contact member 64 are formed in the Si substrate unit 61,the top chip 201 is planarized, and thereafter, three wiring layers areformed. The three wiring layers use the Si oxide film 152 as theinterlayer insulating film and use the wiring metal 66 as the wire andthe via, and furthermore, the barrier metal 67 is used for the wiringmetal 66. The diffusion barrier film is used between the wiring layers.

In step S215, the manufacturing device performs the through electrodeforming processing described above with reference to FIG. 6, withrespect to the top chip 201. That is, in step S215, the insulating film91 is formed on the substrate of the reversed top chip 201, a lens isformed in a portion except for the portion (an internal portion of theguard ring 71) in which the through electrode is formed, on theinsulating film 91, and lithography is performed. Plasma etching isperformed until right before the wiring metal is exposed, and thereafterthe resist is removed.

Then, as illustrated in FIG. 18C, the insulating film 93 which insulatesthe Si substrate unit 61 and the through electrode is formed.Thereafter, without exposing the wiring metal, a resist is formed insuch a manner that a through hole 212 can be formed up to the throughelectrode 97 of the upper chip 51, and lithography is performed. Then,the through hole 212 is formed by the plasma etching up to the throughelectrode 97 of the upper chip 51, and thereafter, the resist 94 isremoved. At this time, the Low-k insulating film 65 in the guard ring 71retreats or disappears. Furthermore, a wiring layer of the top chip 201in the guard ring 71 is exposed by the plasma etching.

Then, as illustrated in FIG. 19A, a film in the through hole 212 using abarrier metal 96 is formed, metal is buried, and then a throughelectrode 213 is formed inside the guard ring 71.

In step S216, the manufacturing device performs forming processing of alight concentration structure described above with reference to FIG. 11,on the top chip 201. That is, the diffusion barrier film 114 and theetching stop film 115 with respect to the through electrode 213 areformed. Patterning is performed except on a portion of the throughelectrode 97. In addition to the through electrode 213, thelight-shielding film (material: Al or W) 116 is formed, the opening 118of the light-receiving unit is formed, and thereafter, the planarizationfilm 117 is formed. Then, as illustrated in FIG. 19B, the color filter119 and the on-chip lens 120 are formed.

As described above, the reversed upper chip 51 is bonded on the lowerchip 52, and the through electrode 97 is formed inside the guard ring 71of the upper chip 51. As a result, a semiconductor chip including animaging element and a semiconductor chip including a logic chip arestacked. Then, the semiconductor chip including the imaging element isfurther stacked on the stacked semiconductor chip, and thereby asolid-state imaging device is manufactured.

In addition, in the above description, as an example in which threesemiconductor chips are stacked, an example of a semiconductor device inwhich a semiconductor chip having an imaging element and twosemiconductor chips having a logic circuit are sequentially stacked isdescribed. However, a configuration or a stack sequence of thesemiconductor chips which are stacked in semiconductor device is notlimited thereto.

The present technology is also applied to, for example, a semiconductordevice in which a semiconductor chip including an imaging element, asemiconductor chip including a logic circuit, and a semiconductor chipincluding a memory circuit are sequentially stacked, or a semiconductordevice in which a semiconductor chip including an imaging element, asemiconductor chip including a memory circuit, and a semiconductor chipincluding a logic circuit are sequentially stacked. In addition, thepresent technology is also applied to a semiconductor device in whichtwo semiconductor chips including a logic circuit and a semiconductorchip including a memory circuit are sequentially stacked.

5. Fifth Embodiment (Modification Example) Another Connection Example ofWire of Guard Ring and Element

FIGS. 20A and 20B are views illustrating a connection example of wiresof a guard ring and an element. In the above-described FIG. 4B, anexample in which a connection of wires of an element configured with theguard ring 71, the element separation member 62, the gate 63, and thecontact member 64 is performed in a bottom layer among four wiringlayers is illustrated.

In contrast to this, in FIG. 20A, an example in which a connection ofwires of an element configured with the guard ring 71, the elementseparation member 62, the gate 63, and the contact member 64 isperformed in a top layer among the four wiring layers is illustrated.

In addition, in FIG. 20B, an example in which a connection of wires ofan element configured with the guard ring 71, the element separationmember 62, the gate 63, and the contact member 64 is performed in thetop layer and the bottom layer among the four wiring layers isillustrated.

As described above, wiring of the guard ring and the element can also beperformed in any layer. For example, the connection may be performed inthe top layer, and may be performed in a plurality of layers. It ispossible to reduce a wire length by selecting an appropriate connectionfrom such connections.

Another Example of Forming Through Hole

In addition, in the above description, an example is described in whichthe lithography is performed in step S71 of FIG. 6, and thereafter, instep S72, the plasma etching is performed until right before the wiringmetal is exposed, and the resist is removed.

In contrast to this, as illustrated in FIG. 21A, the lithography isperformed in step S71 of FIG. 6, and thereafter, the above-describedplasma etching is performed in step S72, but instead, as illustrated inFIG. 21B, the through hole 95 can be formed in a self-aligned mannerusing the guard ring 71.

There is a possibility that failure due to instability of a process or areaction product can occur by the plasma etching depending on metalspecies, but it is possible to reduce the number of processes byomitting, for example, the processes of steps S74 to S76 of FIG. 6.

Example of Acquiring Insulating Properties of Si Substrate Unit andThrough Electrode

In addition, an insulating film 321 is buried in a portion in which thethrough electrode of an upper chip 311 described above with reference toFIG. 4A is formed, that is, in the Si substrate unit 61 of a portion inwhich the guard ring 71 is formed, as illustrated in FIG. 22A.

Here, the description will be made again using FIG. 6 described above.In addition, FIG. 22A corresponds to FIG. 4A, FIG. 22B corresponds toFIG. 7A, FIG. 23A corresponds to FIG. 7C, and FIG. 23B corresponds toFIG. 8A.

That is, the reversed upper chip 311 is bonded to the lower chip 52 instep S71 of FIG. 6, and in the upper chip 311, the lithography isperformed in the portion in which the through electrode is formed.Specifically, as illustrated in FIG. 22B, the insulating film (forexample, SiO2) 91 is formed on the substrate of the reversed upper chip311, and on the insulating film, the resist 92 is formed in a portionexcept for the portion (internal portion of guard ring 71) in which thethrough electrode is formed, and then the lithography is performed.

In step S72, as illustrated in FIG. 23A, the plasma etching is performeduntil right before the wiring metal is exposed, and thereafter, theresist 92 is removed.

Here, since the insulating film 321 is buried in the Si substrate unit61 of the upper chip 311, the processing of step S73 is skipped.

In step S74, as illustrated in FIG. 23B, without exposing the wiringmetal, the resist 94 is formed in such a manner that the through hole 95can be formed up to the pad 81 of the lower chip 52, and the lithographyis performed.

As described above, in the forming processing of the through electrodeof FIG. 6 described above, step S73 can be skipped. That is, withoutperforming the process of step S73, it is possible to acquire theinsulating properties of the Si substrate unit and the throughelectrode, and to reduce the number of processes.

Contact Method of Through Electrode and Guard Ring

In addition, in the example of FIG. 9B described above, an example isdescribed in which the through electrode 97 is in contact with theentirety (four wiring layers) of the guard ring 71, but may also bebonded to a portion thereof.

That is, in FIG. 24A, when the Si substrate unit 61 of the upper chip311 is viewed from bottom, the upper chip 311 may be formed in such amanner that only the bottom layer of the four wiring layers is incontact with the guard ring 71. Alternatively, in FIG. 24B, when the Sisubstrate unit 61 of the upper chip 311 is viewed from bottom, the upperchip 311 may be formed in such a manner that only the top layer of thefour wiring layers is in contact with the guard ring 71. In addition, alayer in which the guard ring 71 in contact with the upper chip 51 idformed is not limited by the bottom layer and the top layer, and it maybe any layer, or may be a plurality of layers.

Even in such a structure, absorption of a Low-k film on an element sidecan be reduced. In addition, for example, abnormality of the processedshape of Low-k insulation film retreat can also be improved, compared toa shared contact through electrode or the like in a case where the Low-kinsulating film which is used for the semiconductor element of astate-of-the-art LSI is used as the interlayer insulating film, in aconfiguration in which the wiring of the chip is bonded in a singlelayer with respect to the through electrode.

Modification Example of Width of Guard Ring

In addition, in FIG. 4B described above, an example is described inwhich the guard ring 71 has an equal width in all of the four wiringlayers, while not being limited thereto. That is, as illustrated by anarrow P of FIG. 25A, it is possible to widen the width of the guard ring71 of only the bottom layer in FIG. 25A. As a result, it is possible toincrease a margin with respect to dimension variation or position shiftof the resist 92 at the time of the lithography in step S71 of FIG. 6,and to improve a failure rate.

In addition, in contrast to this, if a width of the entire guard ring 71is widened, design width (DM) violation can occur at the time of maskdesign.

As described above, by forming the guard ring, there is a favorableshared contact with an exclusive area and the number of process steps,and when the through electrode is formed, the Low-k interlayerinsulating film is shielded almost completely from the plasma, thecleaning chemical liquid, and the atmosphere. Thus, it is possible todecrease the failure rate or to improve the reliability.

In addition, in the above description, an example is described in whicha back-illumination type imaging element is used as an imaging elementwhich is included in a chip, but a surface illumination type imagingelement may be used.

In addition, the present technology is not limited to being applied to asolid-state imaging device such as an image sensor. That is, the presenttechnology can be applied to all kinds of electronic apparatuses, whichuse a solid-state imaging device for an image capturing unit(photoelectric conversion unit), such as an imaging device such as adigital still camera or a video camera, a mobile terminal device havingan imaging function, or a copying machine which uses a solid-stateimaging device for an image reading unit.

Furthermore, the present technology is not limited to a solid-stateimaging device such as an image sensor, and can also be applied to asemiconductor device in which two semiconductor chips including a logiccircuit and a semiconductor chip including a memory circuit are stacked.

6. Sixth Embodiment Configuration Example of Electronic Apparatus

FIG. 26 is a block diagram illustrating a configuration example of acamera device as an electronic apparatus to which the present technologyis applied.

A camera device 600 of FIG. 26 includes an optical unit 601 configuredby a lens group or the like, a solid-state imaging device (imagingdevice) 602 in which each configuration of the above-described pixels 2is employed, and a DSP circuit 603 which is a camera signal processingcircuit. In addition, the camera device 600 also includes a frame memory604, a display unit 605, a recording unit 606, a manipulation unit 607,and a power supply unit 608. The DSP circuit 603, the frame memory 604,the display unit 605, the recording unit 606, the manipulation unit 607,and the power supply unit 608 are connected to each other through a busline 609.

The optical unit 601 captures incident light (image light) from asubject and forms an image on an imaging plane of the solid-stateimaging device 602. The solid-state imaging device 602 converts anamount of light of the incident light formed on the imaging plane by theoptical unit 601 into an electrical signal by a pixel and outputs theelectrical signal as a pixel signal. It is possible to use thesolid-state imaging device according to the above-described embodimentsas the solid-state imaging device 602.

The display unit 605 is configured by a panel type display device suchas a liquid crystal panel or an organic Electro Luminescence (EL) panel,and displays a moving image which is imaged by the solid-state imagingdevice 602 or a still image. The recording unit 606 records the movingimage which is imaged by the solid-state imaging device 602 or the stillimage in a recording medium such as a video tape or a digital versatiledisc (DVD).

The manipulation unit 607 generates a manipulation command with regardto various functions which are given to the camera device 600, accordingto manipulation performed by a user. The power supply unit 608appropriately supplies the DSP circuit 603, the frame memory 604, thedisplay unit 605, the recording unit 606, and the manipulation unit 607with various power supply voltages which become operational power supplyvoltages thereof.

In addition, in the present specification, the steps in which a seriesof processes described above is described include processing which isperformed in time series according to the described sequence, and alsoinclude processing which is performed in parallel or separately, even ifit is not the processing which is necessarily performed in time series.

In addition, the embodiments according to the present technology are notlimited to the embodiments described above, and various modificationscan be performed in a range without departing from the gist of thepresent technology.

In addition, each step described in the flow charts described above canbe performed in one device, and can be performed separately in aplurality of devices.

Furthermore, if a plurality of processings are included in one step, theplurality of processings included in the one step can be performed inone device, and can be performed separately in a plurality of devices.

As described above, one device (or processing unit) may be divided so asto be configured by a plurality of devices (or processing units). Incontrast, in the above description, the plurality of devices (orprocessing units) may be combined so as to be configured by one device(or processing unit). In addition, another configuration except forthose described above may be added to the configuration of each device(or each processing unit). Furthermore, if the configurations or theoperations of all the systems are the same as each other, a portion ofthe configuration of a device (or processing unit) may be included inthe configuration of another device (or another processing unit). Thatis, the present technology is not limited to the embodiments describedabove, and various modifications can be performed in a range withoutdeparting from the gist of the present technology.

As described above, appropriate embodiments according to the presenttechnology are described in detail with reference to the attacheddrawings, but the present technology is not limited to such examples. Itis obvious that various modifications or revisions may be conceived bythose skilled in the art to which the present technology belongs, withinthe technical scope described in the claims. It is also understood thatsuch things naturally belong to the technical scope of the presenttechnology.

In addition, the present technology can also be made by the followingconfigurations.

(1) A semiconductor device including: a wiring layer that includes atleast one low-dielectric rate interlayer insulating film layer; a guardring that is formed by placing in series a wire and a via so as to be incontact with a through electrode, in a portion in which the throughelectrode passing through the wiring layer is formed; and the throughelectrode that is formed by being buried inside the guard ring.

(2) The semiconductor device described in (1), in which the guard ringis electrically connected.

(3) The semiconductor device described in (1) or (2), in which aplurality of semiconductor substrates are stacked, and in which thesemiconductor substrate including the wiring layer is electricallyconnected to another semiconductor substrate through the throughelectrode.

(4) The semiconductor device described in (3), in which thesemiconductor substrate including a contact image sensor (CIS) isstacked on the semiconductor substrate including the wiring layer.

(5) The semiconductor device described in (3), in which thesemiconductor substrate including the wiring layer is configured toinclude a signal processing circuit.

(6) The semiconductor device described in (3), in which anothersemiconductor substrate is configured to include a signal processingcircuit.

(7) The semiconductor device described in (3), in which anothersemiconductor substrate is configured to include a storage mediumcircuit.

(8) The semiconductor device described in (3), in which thesemiconductor substrate including the wiring layer is configured toinclude a contact image sensor (CIS).

(9) A manufacturing method of a semiconductor device, including: forminga guard ring by placing in series a wire and a via so as to be incontact with a through electrode, in a portion in which the throughelectrode passing through a wiring layer is formed, in the wiring layerthat includes at least one low-dielectric rate interlayer insulatingfilm layer, using a manufacturing device; and forming the throughelectrode inside the formed guard ring, using the manufacturing device.

(10) An electronic apparatus including: a semiconductor device, in whichthe semiconductor device includes a wiring layer that includes at leastone low-dielectric rate interlayer insulating film layer; a guard ringthat is formed by placing in series a wire and a via so as to be incontact with a through electrode, in a portion in which the throughelectrode passing through the wiring layer is formed; and the throughelectrode that is formed by being buried inside the guard ring.

(11) The electronic apparatus described in (10), in which thesemiconductor device is a solid-state imaging device, and in which thesemiconductor device further includes a signal processing circuit thatprocesses an output signal that is output from the solid-state imagingdevice; and an optical system that makes incident light be incident onthe solid-state imaging device.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. A method of manufacturing a device, the methodcomprising: forming a first plurality of wiring layers at a side of afirst substrate such that at least one low-dielectric rate interlayerinsulating film layer is between each wire of a respective wiring layerand a diffusion barrier film, wherein the diffusion barrier filmcontacts each wire of the first plurality of wiring layers; forming aguard ring that includes a wire from each of the first plurality ofwiring layers and a plurality of vias arranged in a stacked structure,wherein each wire from each of the first plurality of wiring layers iselectrically connected to a respective via of the plurality of vias;forming a second plurality of wiring layers and a plurality of pads at aside of a second substrate such that at least one interlayer insulatingfilm layer is between each wire of a respective wiring layer and adiffusion barrier film, wherein each wire of the second plurality ofwiring layers is disposed on the diffusion barrier film and at least onepad is electrically connected to a wire of a wiring layer of the secondplurality of wiring layers; bonding the first substrate to the secondsubstrate; and forming a through-electrode inside the guard ring suchthat the guard ring is electrically connected to the at least one pad,wherein at least one via of the plurality of vias includes a metalmaterial disposed between the diffusion barrier film and thethrough-electrode.
 2. The method of manufacturing the device accordingto claim 1, wherein the first substrate is electrically connected to thesecond substrate through the through-electrode.
 3. The method ofmanufacturing the device according to claim 2, further comprising:stacking a semiconductor substrate including a contact image sensor(CIS) on the first substrate.
 4. The method of manufacturing the deviceaccording to claim 2, wherein the first substrate includes a signalprocessing circuit.
 5. The method of manufacturing the device accordingto claim 2, wherein the first substrate includes a contact image sensor(CIS).
 6. The method of manufacturing the device according to claim 2,further comprising: stacking another substrate that includes a signalprocessing circuit on the device.
 7. The method of manufacturing thedevice according to claim 2, further comprising: stacking a thirdsubstrate that includes a storage medium circuit on the device.
 8. Themethod of manufacturing the device according to claim 1, wherein thefirst substrate is a first semiconductor substrate and the secondsubstrate is a second semiconductor substrate.
 9. A method ofmanufacturing an electronic apparatus, the method comprising: forming afirst plurality of wiring layers at a side of a first substrate suchthat at least one low-dielectric rate interlayer insulating film layeris between each wire of a respective wiring layer and a diffusionbarrier film, wherein the diffusion barrier film contacts each wire ofthe first plurality of wiring layers; forming a guard ring that includesa wire from each of the first plurality of wiring layers and a pluralityof vias arranged in a stacked structure, wherein each wire from each ofthe first plurality of wiring layers is electrically connected to arespective via of the plurality of vias; forming a second plurality ofwiring layers and a plurality of pads at a side of a second substratesuch that at least one interlayer insulating film layer is between eachwire of a respective wiring layer and a diffusion barrier film, whereineach wire of the second plurality of wiring layers is disposed on thediffusion barrier film and at least one pad is electrically connected toa wire of a wiring layer of the second plurality of wiring layers;bonding the first substrate to the second substrate; forming athrough-electrode inside the guard ring such that the guard ring iselectrically connected to the at least one pad, wherein at least one viaof the plurality of vias includes a metal material disposed between thediffusion barrier film and the through-electrode; and providing a lensconfigured to direct light to a light-incident surface of the firstsubstrate or the second substrate.
 10. The method of manufacturing theelectronic apparatus according to claim 9, wherein the first substrateis electrically connected to the second substrate through thethrough-electrode.
 11. The method of manufacturing the electronicapparatus according to claim 10, further comprising: stacking asemiconductor substrate including a contact image sensor (CIS) on thefirst substrate.
 12. The method of manufacturing the electronicapparatus according to claim 10, wherein the first substrate includes asignal processing circuit.
 13. The method of manufacturing theelectronic apparatus according to claim 10, wherein the first substrateincludes a contact image sensor (CIS).
 14. The method of manufacturingthe electronic apparatus according to claim 10, further comprising:stacking another substrate that includes a signal processing circuit onone of the first or second substrates.
 15. The method of manufacturingthe electronic apparatus according to claim 10, further comprising:stacking a third substrate that includes a storage medium circuit on oneof the first or second substrates.
 16. The method of manufacturing theelectronic apparatus according to claim 9, wherein the first substrateis a first semiconductor substrate and the second substrate is a secondsemiconductor substrate.